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1N/FDLL 914/A/B / 916/A/B / 4148 / 4448
Discrete POWER & Signal Technologies
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448
COLOR BAND MARKING DEVICE FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A FDLL916B FDLL4148 FDLL4448 1ST BAND 2ND BAND BLACK BLACK BROWN BLACK BLACK BROWN BLACK BROWN BROWN GRAY BLACK RED WHITE BROWN BROWN BLACK
LL-34 DO-35
THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL
High Conductance Fast Diode
Sourced from Process D3.
Absolute Maximum Ratings*
Symbol
W IV IO IF if if(surge) Working Inverse Voltage Average Rectified Current DC Forward Current Recurrent Peak Forward Current
TA = 25C unless otherwise noted
Parameter
Value
75 200 300 400 1.0 4.0 -65 to +200 175
Units
V mA mA mA A A C C
Tstg TJ
Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond Storage Temperature Range Operating Junction Temperature
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RJA
TA = 25C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient
Max
1N/FDLL 914/A/B / 4148 / 4448 500 3.33 300
Units
mW mW/C C/W
a 1997 Fairchild Semiconductor Corporation
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448
High Conductance Fast Diode
(continued)
Electrical Characteristics
Symbol
BV IR
TA = 25C unless otherwise noted
Parameter
Breakdown Voltage Reverse Current
Test Conditions
IR = 100 A IR = 5.0 A VR = 20 V VR = 20 V, TA = 150C VR = 75 V IF = 5.0 mA IF = 5.0 mA IF = 10 mA IF = 20 mA IF = 30 mA IF = 100 mA VR = 0, f = 1.0 MHz VR = 0, f = 1.0 MHz IF = 10 mA, VR = 6.0 V (60 mA), Irr = 1.0 mA, RL = 100
Min
100 75
Max
Units
V V nA A A mV mV V V V V pF pF nS
VF
CO
TRR
1N914B / 4448 1N916B 1N914 / 916 / 4148 1N914A / 916A 1N916B 1N914B / 4448 Diode Capacitance 1N916/A/B / 4448 1N914/A/B / 4148 Reverse Recovery Time
Forward Voltage
620 630
25 50 5.0 720 730 1.0 1.0 1.0 1.0 2.0 4.0 4.0
Typical Characteristics
REVERSE VOLTAGE vs REVERSE CURRENT BV - 1.0 to 100 uA
V VRR - REVERSE VOLTAGE (V)
REVERSE CURRENT vs REVERSE VOLTAGE IR - 10 to 100 V
IR - REVERSE CURRENT (nA) 120
Ta= 25C
160 150 140 130 120 110
Ta= 25C
100 80 60 40 20 0 10 20 30 50 VR - REVERSE VOLTAGE (V) 70 100
1
2
5 10 20 30 50 I R - REVERSE CURRENT (uA)
3
100
GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature
FORWARD VOLTAGE vs FORWARD CURRENT VF - 1 to 100 uA
V F - FORWARD VOLTAGE (mV) 550 500 450 400 350 300 250 1 2 3 5 10 20 30 50 IF - FORWARD CURRENT (uA) 100
Ta= 25C
FORWARD VOLTAGE vs FORWARD CURRENT VF - 0.1 to 100 mA
V F - FORWARD VOLTAGE (mV) 750 700 650 600 550 500 450 0.1 0.2 0.3 0.5 1 2 3 5 I F - FORWARD CURRENT (mA) 10
Ta= 25C
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448
High Conductance Fast Diode
(continued)
Typical Characteristics
(continued)
FORWARD VOLTAGE vs FORWARD CURRENT VF - 10 to 800 mA
V V F - FORWARD VOLTAGE (mV) F
VF - 0.01 - 20 mA (-40 to +65 Deg C) FORWARD VOLTAGE vs AMBIENT TEMPERATURE
900 800 700 600 500 400 300 0.01 0.03 0.1 0.3 1 3 I F - FORWARD CURRENT (mA) 10
Ta= +65C
Typical
V F - FORWARD VOLTAGE (V)
1.6 1.4 1.2 1 0.8
Ta= 25C
Ta= -40C Ta= +25C
0.6 10
20
30 50 100 200 300 I F - FORWARD CURRENT (mA)
500
CAPACITANCE vs REVERSE VOLTAGE VR = 0.0 to 15 V
Ta= 25C
REVERSE RECOVERY TIME vs REVERSE CURRENT
REVERSE RECOVERY (nS) 4 3.5 3 2.5 2 1.5 1 10 20 30 40 50 REVERSE CURRENT (mA) 60
Ta= 25C
0.9 CAPACITANCE (pF)
0.85
0.8
0.75
0
2
4 6 8 10 REVERSE VOLTAGE (V)
12
14
IF = 10 mA - IRR = 1.0 mA - Rloop = 100 Ohms
PD - POWER DISSIPATION (mW) P D
Average Rectified Current (Io) & Forward Current (I F) versus Ambient Temperature (TA)
500 I - CURRENT (mA) 400 300 200 100 0
IR -F OR WA RD
POWER DERATING CURVE
500
DO-35
400
Io - A ST VER AT AGE EREC TIFIE mA D CU RRE NT mA
CU RR EN TS TE AD Y
300
SOT-23
200
100
0
0
50 100 150 o TA - AMBIENT TEMPERATURE ( C)
0
50 100 150 IO - AVERAGE TEMPERATURE ( oC)
200
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No Identification Needed
Full Production
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This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

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